电子束暴露的电阻的表面电位分布和非充电暴露条件
Masatoshi Kotera1, Yoshinobu Kono1
1Major in Electrical, Electronic and Mechanical Engineering, Osaka Institute of Technology, 5-16-1, Omiya, Asahi-ku, Osaka 535-8585, Japan.
玻璃上绝缘膜的电子束辐射会导致充电. 应用电压和理解电子束诱导导力有助于管理充电效应,特别是在低加速电压下.
科学领域:
- 材料科学 材料科学 材料科学
- 物理 物理学 物理
背景情况:
- 在导电层上对绝缘膜的电子束 (EB) 辐射可以诱导充电现象.
- 了解和控制这种充电对于微型制造和材料加工中的应用至关重要.
研究的目的:
- 在电子束辐射下对导电层上的绝缘电阻膜的充电现象进行实验分析.
- 开发一个解释正负电荷及其转换的模型.
- 研究各种暴露条件和加速电压对充电潜力的影响.
主要方法:
- 使用扫描电子显微镜 (SEM) 配备静电力显微镜 (EFM) 来量化充电潜力.
- 在各种受控暴露条件下,用电子束辐射的样品.
- 分析潜在分布以了解电荷积累机制.
主要成果:
- 确定了"全球收费"和"地方收费"现象.
- 由于二次电子排放而观测到正电荷和由于发生电子积累而观测到负电荷.
- 发现了"零交叉暴露剂量",其中净潜力为零.
- 发现,在0.6kV的加速电压下,样品表面在广泛的暴露剂量范围内保持无电荷.
结论:
- 开发了电荷积累模型,解释了观察到的充电行为.
- 证明应用负电压可以减轻全球充电.
- 突出了电子束诱导导电导在充电过渡中的关键作用.
- 确定了最小化充电效应的特定条件 (0.6 kV).
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