超宽近红外发射佩罗夫斯基特
Sajid Saikia1, Animesh Gopal2, Radha Rathod3
1Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, 411008, India.
Angewandte Chemie (International ed. in English)
|September 20, 2024
概括
新的超宽近红外 (NIR) 发射被开发用于转换发光二极管 (pc-LED). 这些新型材料使先进的NIR成像应用具有更高的性能和稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态照明 固态照明
- 光子学是指光子学的使用方法.
背景情况:
- 转换发光二极管 (pc-LED) 已经取代了白灯,以节能照明.
- 由于缺乏合适的光体,开发发射超广近红外 (NIR) 辐射的pc-LED具有挑战性.
研究的目的:
- 为先进的PC-LED应用合成和表征新型超宽NIR发射.
- 研究这些新材料的光发光特性和潜在应用.
主要方法:
- 合成W4+化和Mo4+化Cs2Na0.95Ag0.05BiCl6化矿.
- 光发光光谱,光谱宽度和量子产量的表征.
- 制造3D打印的pc-LED面板,使用和多乳酸的复合物.
主要成果:
- 实现了超宽的NIR发射,光谱宽度为434nm (W4+) 和468nm (Mo4+).
- 在NIR-I区域观察到广泛的自我捕获激子 (STE) 发射,并在NIR-II区域 (~950 nm) 观察到多邦d-d过渡.
- 经过证明的NIR光发光量子产量高达~40%,并制造出坚固,热稳定的3D打印PC-LED面板.
结论:
- 开发的超宽NIR光器显示出下一代pc-LEDs的巨大潜力.
- 能够3D打印这些材料的能力为定制的NIR照明和成像解决方案打开了道路.
- 这些光器推进了固态照明和NIR技术的领域.
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