Heng Qi1, Yu Tong1, Xuewen Zhang2

  • 1State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.

概括

研究人员使用一种新的添加剂接口策略开发了高效和稳定的蓝色矿发光二极管 (PeLED). 这种方法优化矿膜质量,增强能量传输和减少缺陷,以提高性能.

相关概念视频

Electrical Energy01:10

Electrical Energy

Using electric appliances for a longer period of time consumes more electrical energy and results in a higher electric bill. The energy produced by the transfer of electrons from one point to another is known as electrical energy. If power is delivered at a constant rate, the electrical energy can be defined as the product of power used by the device for a period of time. The energy unit on electric bills is the kilowatt-hour, where one kilowatt-hour is equivalent to 3.6 × 106 joules. The...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...