来自f电子直线反铁磁结构的大型异常霍尔导电性
Hisashi Kotegawa1, Hiroto Tanaka1, Yuta Takeuchi1
1Department of Physics, <a href="https://ror.org/03tgsfw79">Kobe University</a>, Kobe, Hyogo 657-8501, Japan.
Physical review letters
|September 20, 2024
概括
研究人员在f电子反铁磁 (AFM) 材料Ce2CuGe6.6中发现了一个巨大的异常霍尔 (AH) 效应. 这一发现推动了对超越d电子材料的AFM系统中AH传输的理解.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子磁力 量子磁力 量子磁力
背景情况:
- 异常的霍尔 (AH) 效应通常在对称性破碎的材料中观察到,例如旅行磁铁.
- 虽然在d电子系统中得到了很好的研究,但驱动f电子反铁磁 (AFM) 材料中AH效应的机制尚不清楚.
研究的目的:
- 调查f电子AFM结构中AH效应的出现.
- 在特定的f电子AFM材料中描述AH导电性的大小和起源.
主要方法:
- 对Ce2CuGe6化合物的实验合成和表征.
- 电传输测量,包括霍尔效应测量,以确定AH电导率.
- 分析AH导电性和电导电性之间的缩放关系.
主要成果:
- AFM材料Ce2CuGe6具有相当大的AH导电性 (AHC),为550 Ω-1 cm-1.1.
- 这个AHC值超过了以前在d电子AFM材料中报告的AHC值.
- 观察到的缩放关系表明,与AFM结构相关的内在和外在机制的合作贡献.
结论:
- 该研究表明,f电子AFM材料Ce2CuGe6.6中存在显著的AH效应.
- 这一发现突显了f电子系统在容纳大型AH反应方面的潜力.
- 在Ce2CuGe6中AH的运输归因于其AFM结构固有的内在和外在因素的组合.
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