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的原子层沉积使用Ni ((dmamb) ₂和ZnO粘附层没有等离子体

Kaiya Baker¹, Hayden Brown¹, Fisseha Gebre¹

¹Center for Advanced Manufacturing in Space Technology and Applied Research (CAM-STAR), University of the District of Columbia, Washington, DC USA.

Nanomanufacturing and metrology

|September 23, 2024

概括

一种新的原子层沉积方法在氧化物 (ZnO) 上使用二甲和 (II) 1-二甲基胺-2-甲基-2-氧化物产生均的层. 这种技术确保了高级材料应用的高质量的ZnO粘合层.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
表面化学表面化学

背景情况:

在先进的电子和光学设备中,开发均和高质量的薄膜至关重要.
原子层沉积 (ALD) 可以精确控制薄膜厚度和成分.
粘附层对于随后的功能材料的成功沉积至关重要.

研究的目的:

提出和演示一种新的原子层沉积 (ALD) 技术,用于在氧化 (ZnO) 粘附层上沉积均的 (Ni) 薄膜.
研究沉积的Ni/ZnO薄膜的生长特征和结构性质.
通过ALD验证ZnO作为Ni沉积的粘附层的有效性.

主要方法:

一种新的ALD工艺,利用二甲 (C4H10ZnO) 和H2O形成一个ZnO粘附层.
随后的沉积使用蒸发的 ((II) 1-二甲基胺-2-甲基-2-氧化物 (Ni ((dmamb) 2) 和H2气体.
使用光谱圆测量,扫描电子显微镜 (SEM),X射线光电子光谱 (XPS) 和X射线衍射 (XRD) 进行薄膜特性表征.

主要成果:

在260°C的Ni沉积过程中,每个周期的平均增长率约为0.0105司每次.
在 SEM 分析中,证实了具有最小污染 (<1%) 的均 ZnO 沉积.
XPS和XRD证实了的存在以及ZnO的晶体六角石结构.

结论:

拟议的ALD技术成功地使在ZnO粘附层上沉积均膜.
该研究验证了ZnO的使用,作为一种高质量的粘合层,用于通过ALD通过沉积.
这种方法具有制造具有定制性质的先进纳米结构材料的潜力.

关键词:

原子层沉积的原子层沉积.使用XRD和XPS进行表征.尼的沉积层是尼的沉积层.ZnO粘附层是一种粘附层.

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