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Updated: Jun 12, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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在LiNbO3中导电中性域壁的移动内在点缺陷

Kristoffer Eggestad1, Benjamin A D Williamson1, Dennis Meier1

  • 1Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology Trondheim Norway selbach@ntnu.no.

Journal of materials chemistry. C
|September 23, 2024
PubMed
概括

酸铁电域壁中的点缺陷可以在n型和p型之间切换导电性. 这为创建可重写纳米电子设备 (如memristors) 提供了一条途径.

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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相关概念视频

Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
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