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Updated: Jun 22, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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使用MoS2/Au Moiré接口在MoS2中制造有模式的单一缺陷

Yang Bao1,2, JingJing Shao1,2, Hai Xu1,2

  • 1State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China.

ACS nano
|September 25, 2024
PubMed
概括

研究人员使用热回火精确地模拟了二硫化物 (MoS2) 中的单硫空缺缺陷. 这一突破通过控制纳米尺度上的缺陷形成,使得基于缺陷的可扩展量子系统成为可能.

关键词:
在MoS2中,MoS2就是MoS2.声学语音符号 (phonons) 是一种声学语音符号.催化作用的催化效应莫伊尔接口的介面单一的缺陷是单一的缺陷.热化热化 热化

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