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在SOI Tri-Gate纳米线场效应晶体管中分析TID和SET之间的合效应

Xilong Zhou¹, Chenyu Yin¹, Hongxia Liu¹

¹Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.

|September 25, 2024

概括

这项研究揭示了无连接积累模式在纳米线场效应晶体管 (NWFET) 中提供了优越的辐射硬度,而在总电离剂量和单一事件短暂效应下,与无连接和反转模式相比.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
辐射的影响辐射效应

背景情况:

纳米线场效应晶体管 (NWFET) 是现代电子产品中的关键组件.
了解它们的辐射硬度对于在恶劣环境中可靠运行至关重要.
不同的操作模式 (无连接,反转,积累) 可能会表现出不同的辐射反应.

研究的目的:

为了研究NWFET在无连接 (JL),反转 (IM) 和无连接积累 (AC) 模式中的辐射反应.
分析总电离剂量 (TID) 和单事件瞬态 (SET) 对NWFET电气性能的合效应.
为了比较不同NWFET模式的辐射耐受性和降解机制.

主要方法:

进行了辐射实验,以评估TID和SET下的NWFET性能.
设备偏差配置有所变化,以分析它们对电气性能的影响.
在照射前后进行电气表征以量化降解.
在不同的TID级别下研究了SET电流生成和电费收集机制.

主要成果:

无连接 (JL) 模式表现出对TID和SET合效应的阻力最差.
倒置 (IM) 模式显示中等阻力,而无连接积累 (AC) 模式显示出最佳的辐射硬度.
TID显著影响了SET电流的产生,峰值电流,脉冲宽度和收集电荷.

结论:

在经过测试的模式中,无连接积累 (AC) 模式是NWFET对辐射最强化的配置.
设备偏差和操作模式是决定NWFET对辐射敏感性的关键因素.
对交流模式优化的进一步研究可以提高NWFET在辐射密集型应用中的可靠性.

关键词:

没有连接的 (JL)纳米线场效应晶体管 (NWFET) 的使用在绝缘体上的 (SOI)单一事件的短暂变量 (SET)总的电离剂量 (TID)这是一个三门的门.

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