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Updated: Jun 27, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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在神经形态计算中用于高性能突触晶体管的WS2的原子Nb兴奋剂

Kejie Guan1,2, Yinxiao Li1,3, Lin Liu1

  • 1i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, China.

Microsystems & nanoengineering
|September 26, 2024
PubMed
概括

将 (Nb) 加入二硫化物 (WS2) 中,可以增强突触晶体管,实现100倍更高的开关比率. 这种兴奋剂方法改善了电子的捕获和脱落,使得高效的学习模拟和高精度的手写数字识别.

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