螺旋域墙热钉和剥离在一个狭窄的磁纳米线存储内存纳米设备的磁纳米线
Mohammed Al Bahri1, Salim Al-Kamiyani1, Al Maha Al Habsi1
1Department of Basic and Applied Sciences, A'Sharqiyah University, P.O. Box 42, Ibra 400, Oman.
Nanomaterials (Basel, Switzerland)
|September 27, 2024
概括
在磁阶纳米线中,域墙壁 (VDW) 的热稳定性通过减少阶层区域深度和增加厚度来增强. 调整渐进的尺寸精确地控制了先进的内存纳米设备的固定强度.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 域墙壁 (VDWs) 对磁性存储内存纳米设备至关重要.
- 了解VDW上的热效应对于设备可靠性至关重要.
研究的目的:
- 在狭窄的磁纳米线中研究VDW的热固定和脱离.
- 检查温度对VDW转换,移动性和固定的影响.
- 根据尺寸,分析热稳定性和在分级纳米线中固定.
主要方法:
- 微磁模拟的微磁模拟
- 旋转转移扭矩分析
- 阶段区域深度 (d) 和长度 (λ) 的系统变化.
主要成果:
- 随着步骤面积深度 (d) 的降低和纳米线厚度 (th) 的增加,VDW的热稳定性会增加.
- 稳定性在温度≥1200K下保持,时间≥50nm.
- VDW的热固定强度随着d的增加而随着λ的减少,在d≥100nm时依赖于≥1000K.
结论:
- 热效应显著影响收缩时的固定强度,影响磁性内存设备的性能.
- 渐进的纳米线设计允许通过d和λ精确控制固定强度.
- 优化设计对于下一代纳米设备至关重要.
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