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Updated: Jun 11, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在C2X-功能化的III-V单层中具有强大的拓绝缘性能

Xianghong Xue1, Zhihua Lin2, Rui Gao2

  • 1School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China.

Nanotechnology
|September 27, 2024
PubMed
概括

这项研究探讨了新的二维拓绝缘器 (TI),用于自旋电子和量子计算,具有更大的带隙. 功能化的III-V单层显示出对室温应用的前景.

关键词:
在C2X的功能化方面,C2X的功能化IIIV 单层的 一个层.大带间隙大带间隙强大的拓性质.

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