一个GexSe1-x开关仅存储技术通过极化原子分布.
Zhi-Lun Liu1,2, Alexander Grun1,2, Wei-Chih Chien1,3,2
1IBM/Macronix PCRAM Joint Project, Yorktown Heights, NY, 10598, USA.
Scientific reports
|September 27, 2024
概括
- (GexSe1-x) 卵性值切换材料表现出可调节的内存特性. 增加含量可以提高新型内存设备应用的设置电压值和设置能量.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 纳米技术 纳米技术
背景情况:
- 卵性值开关 (OTS) 材料,通常集成为1S1R (一个选择器-一个电阻) 在内存设备中,提供可控制和可逆的内存特征.
- 这些特性具有开发高级内存架构的潜力.
- 了解材料组成对OTS设备性能的影响对于优化内存应用至关重要.
研究的目的:
- 研究构成对GexSe1-xOTS材料的极性依赖记忆特性的影响.
- 探索GexSe1-x在制造开关仅存储技术方面的潜力.
- 为自选OTS材料的运行提供机械洞察力.
主要方法:
- 对GexSe1-x材料进行组合分析,以与内存属性相关联.
- 制造Ge56Se44成1000x1000的交叉点柱阵列.
- 设备性能的电气特性,包括设置电压值 (Vth),重置电流 (IRST),设置能量,开关速度和耐久性.
主要成果:
- 在GexSe1-x中增加的含量导致更高的Vth,更低的IRST和更高的设置能量.
- 在回火后,Ge56Se44表现出稳定,独特的Vth值 (5.1V和3.8V).
- 制造的Ge56和Se44设备表现出快速切换速度 (1μs重置,50ns设置) 和高耐久性 (>10到5个周期),归因于极化原子分布.
结论:
- GexSe1-x材料通过调整组合来提供可调节的内存特性,从而使开关仅存储技术的开发成为可能.
- 极化原子分布是重置和设置状态的关键,在Ge56Se44支柱中.
- 这项研究为设计下一代内存设备的自选择OTS材料提供了有价值的机械学知识.
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