相关实验视频

Updated: Jun 11, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

27.6K

极化合的InGaNLED和激光二极管用于广泛的温度范围运行

Muhammed Aktas1, Szymon Grzanka1, Łucja Marona1

  • 1Institute of High Pressure Physics "Unipress", Sokolowska 29, 01-142 Warsaw, Poland.

Materials (Basel, Switzerland)
|September 28, 2024
PubMed
概括

极化合化 (InGaN) 光发射器在广泛的温度范围内实现稳定的运行. 这项研究表明,发光二极管 (LED) 和激光二极管从冷到室温的有效发射.

关键词:
半导体III-化物半导体在InGaN量子井中.在LEDLEDLEDLED中,我们可以看到LED.低温温度是冷的温度.激光二极管激光二极管是如何使用的光电子产品的光电子产品.两极分化 兴奋剂 兴奋剂

更多相关视频

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties10:16

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties

Published on: January 8, 2016

13.9K
Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy08:48

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

7.5K

相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
443