相关实验视频

Updated: Jun 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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基于GaN的MIS-HEMT上的质子辐射效应和可靠性

Zixin Zhen1, Chun Feng2, Hongling Xiao2

  • 1China Aerospace Science & Industry Corp Defense Technology R&T Center, Beijing 1000854, China.

Micromachines
|September 28, 2024
PubMed
概括

双层介电 (SiNx/Al2O3) 金属绝缘体-半导体高电子移动性晶体管 (MIS-HEMT) 显示出优越的质子辐射可靠性. 这种先进的门结构最大限度地降低了材料和电气性能退化,提高了辐射弹性.

关键词:
在 GaN GaN 中.这是一个错误的男人.辐射效应和可靠性的影响.

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