在高温下高射频过速压力下的AlGaN/GaN高电子流动性晶体管的电气性能和可靠性
Chang Liu1,2, Yiqiang Chen2, Yuhan Xie2
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|September 28, 2024
概括
高温无线电频率 (RF) 应力影响AlGaN/GaN高电子流动性晶体管 (HEMT). 由于减少热电子效应和改进的Schottky接口,在更高的温度下设备的降解减少.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 高电子移动性晶体管 (HEMT) 对于高功率,高频应用至关重要.
- 在压力下了解设备可靠性对于性能优化至关重要.
研究的目的:
- 在高温射频超速压力下研究AlGaN/GaN HEMT的电性能和可靠性.
- 为了阐明温度对设备降解机制的影响.
主要方法:
- 在各种温度 (25°C,55°C,85°C) 上将AlGaN/GaN HEMT 置于射频过速应力.
- 分析电气特性,包括排水电流,传导率和值电压.
- 进行脉冲I-V,低频噪声和电光发射 (EL) 测试.
主要成果:
- 设备的退化 (排水电流,透导) 随着温度的增加而降低.
- 当前崩被抑制,陷密度在更高的温度下减少.
- 电光发射在应力后变得更弱,更分散,表明材料发生了变化.
结论:
- 在较低温度下降解主要归因于热电子效应 (HEE).
- 在更高的温度下,减少HEE和改进的Schottky接口可以减轻降解.
- 温度对AlGaN/GaN HEMT的可靠性和操作机制起着至关重要的作用.
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