用于高功率和高频率操作的各种介电被动结构的AlGaN/GaN高电子移动性晶体管的操作特性:模拟研究
Ji-Hun Kim1, Chae-Yun Lim1, Jae-Hun Lee1
1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea.
Micromachines
|September 28, 2024
概括
这项研究优化了使用高k被动化的AlGaN/GaN HEMT. HfO2部分被动化改善了频率响应和功率,平衡了用于高功率应用的故障电压.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT) 对于高功率和高频电子非常重要.
- 消化层显著影响HEMT性能,影响故障电压和操作稳定性.
- 优化被动化是提高要求高的应用程序的设备功能的关键.
研究的目的:
- 调查各种被动化材料和结构对AlGaN/GaN HEMT操作特性的影响.
- 探索使用Al2O3和HfO2等高k介电材料来改善分解电压.
- 分析混合和部分被动化结构,以减轻由寄生电容引起的频率减少.
主要方法:
- 模拟与实验数据从基本的Si3N4被动化结构校准的模拟.
- 用高k材料 (Al2O3,HfO2) 替换Si3N4,以评估故障电压的改善.
- 混合和部分被动化结构的分析,以评估故障电压和切断频率之间的权衡.
主要成果:
- 与Si3N4.4相比,Al2O3和HfO2被动化分别增加了6.62%和17.45%的分解电压.
- 高k材料的寄生能力增加导致了切断频率的降低.
- 与HfO2.2相比,HfO2部分被动化显示故障电压下降了7.6%,但切断频率增加了82.76%,与HfO2.2相比.
- 该HfO2部分被动化结构实现了最高的约翰逊的优点数字.
结论:
- 对于AlGaN/GaN HEMTs来说,HfO2部分被动化提供了高分断电压和增强的频率特征之间的有希望的平衡.
- 这种优化的结构解决了高k介电被动化固有的权衡问题.
- HfO2部分被动化结构是未来高功率,高频器件应用的强有力的候选者.
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