偏差电压对AlGaN/GaN高电子流动性晶体管有效电子速度的影响
Guangyuan Jiang1, Peng Cui2, Chen Fu1
1School of Information Science and Electrical Engineering, Shandong Jiaotong University, Jinan 250357, China.
Micromachines
|September 28, 2024
概括
这项研究揭示了门偏差如何通过分析内在和寄生性电阻来影响AlGaN/GaN HEMT中的电子速度. 了解POP和PCF等散射机制是提高设备线性和性能的关键.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 在高频应用中,AlGaN/GaN高电子移动性晶体管 (HEMT) 是至关重要的.
- 了解偏差下的电子传输机制对于优化HEMT性能至关重要.
- 小信号 S 参数提供了对晶体管在各种操作点的行为的洞察.
研究的目的:
- 从制造的AlGaN/GaN HEMTs中提取小信号等效电路 (SSEC) 和内在参数.
- 研究门偏差 (VGS) 对有效电子速度 (νe-eff) 的影响.
- 为了建立n-eff,内在电子速度 (n-e-int) 和偏差依赖的寄生电阻之间的相关性.
主要方法:
- 在各种DCQOP中测量双指门AlGaN/GaN HEMT的小信号S参数.
- 提取SSEC参数 (例如R_g,R_d) 和内在参数.
- 使用每个VGS的ft和SSEC参数计算n-eff和n-int.
主要成果:
- 进行了对VGS对n-eeff影响的系统研究,从而得出了推导的相关性.
- νe-eff受到ne-int和寄生性电阻的影响,而寄生性电阻则受到分散机制的影响.
- 极光声波 (POP) 和极化库伦波场 (PCF) 的散射影响了ne-int和寄生体电阻.
结论:
- 在AlGaN/GaN HEMT中,有效电子速度是由门偏差通过内在速度和寄生电阻变化来调节的.
- 散射机制 (POP,PCF) 起着双重作用,影响内在速度和寄生性电阻.
- 优化设备结构以管理PCF散射对于提高线性和整体HEMT性能至关重要.
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