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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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优化非合金背面欧姆接触到N面GaN的非合金背面欧姆接触,用于完全垂直的基于的GaN电源设备
Youssef Hamdaoui1,2, Sofie S T Vandenbroucke2, Sondre Michler3
1Institute of Electronics, Microelectronics and Nanotechnology, CNRS-IEMN, 59650 Lille, France.
Micromachines
|September 28, 2024
概括
在N极化 (GaN) 上优化非合金欧姆接触需要特殊的表面处理. 在70°C下进行3分钟的盐酸 (HCl) 处理显著改善了GaN-on-Silicon设备的接触质量.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备制造业 半导体设备制造业
- 化 (GaN) 技术 化 (GaN) 的技术
背景情况:
- 开发完全垂直的化 (GaN) 上设备技术对于先进的电子技术至关重要.
- 在N极的n+化GaN后面层上实现可靠的非合金欧姆接触是关键的挑战.
- 在去除基板后,在N极GaN上沉积的金属堆上观察到低欧姆接触质量.
研究的目的:
- 为了优化N极性n+化GaN后面层上的非合金欧米接触.
- 研究盐酸 (HCl) 处理对接触电阻和材料性能的影响.
- 确定HCl处理的最佳条件,以实现热稳定,高质量的欧姆接触.
主要方法:
- 使用直接激光书写光刻法制造有图案的传输线模型 (TLM) 结构.
- 通过局部去除基板和缓冲层来访问N极 n+ 合的GaN后面层.
- 在不同的时间和温度条件下,在金属化之前应用HCl处理.
- 使用扫描电子显微镜 (SEM) 和X射线光电谱 (XPS) 进行表征.
主要成果:
- 在70°C进行3分钟的HCl处理,为热稳定,高品质的欧姆接触提供了最佳条件.
- 在XPS分析中显示,HCl处理后Ga-O度下降,表明氧化减少.
- 在HCl处理后,SEM揭示了N面上依赖时间的金字塔的形成,影响了接触质量.
结论:
- 优化的HCl处理对于改善N极GaN的非合金欧姆接触质量至关重要.
- 与Ga-极面相比,N极的GaN表面具有更高的氧化易感性.
- 表面形态变化,如金字塔形成,由于HCl处理影响欧姆接触性能.
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