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Updated: Apr 13, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在MoS2/石墨烯范德瓦尔斯异构结构中,光学诱导的三离子形成及其控制

Madhura Ghosh Dastidar1,2,3, Nilanjan Basu1,2,3, I-Hsuan Kao4

  • 1Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India. pramoda.nayak@jainuniversity.ac.in.

Nanoscale
|September 30, 2024
PubMed
概括

由于电荷转移,局部化的三离子在二硫化 (MoS2) /石墨烯异构中形成. 这种电荷载体度,可以通过激发功率调节,驱动三离子形成,而不是介电选.

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Fabricating van der Waals Heterostructures with Precise Rotational Alignment09:25

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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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