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Updated: Jun 11, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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液体金属氧化物辅助集成高k介电物和金属接触物用于二维电子产品

Dasari Venkatakrishnarao1,2, Abhishek Mishra1,3, Yaoju Tarn1

  • 1Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.

ACS nano
|October 1, 2024
PubMed
概括

一种新的液体金属氧化物方法使2D半导体上的均高k介电集成成为可能,这对于先进的纳米电子学至关重要. 这种方法提高了晶体管的性能,并为未来的电子设备提供了可扩展的制造.

关键词:
2D 材料是二维材料.这是一个二维半导体半导体.场效应晶体管电晶体管.接口 接口 接口 接口 接口低于门值的波动可以改变.过渡金属二甲基二甲基化物范德瓦尔斯 (Van der Waals) 是一个伟大的科学家.

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