载体类型和密度依赖于WSe中的冲击电离特性2
Haeju Choi1,2, Jinshu Li1,2, Taeho Kang1,2
1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Nanoscale
|October 1, 2024
概括
这项研究表明,WSe2对冲击电离的电场非常低,特别是当由孔启动时. 优化载体密度和选效果可以提高晶体管和雪崩光探测器的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 冲击电离对于低功耗,高速晶体管和高增益光电探测器至关重要.
- 了解WSe2等二维材料中的冲击电离是下一代电子产品的关键.
研究的目的:
- 在WSe2.2中研究电子和孔启动冲击电离的密度依赖性.
- 确定用于设备应用的WSe2中冲击电离的最佳条件.
主要方法:
- 在不同载体密度的WSe2中对冲击电离的实验研究.
- 分析载体散射机制及其与选效应的关系.
- 基于优化冲击电离条件的雪崩光探测器 (APD) 的制造和表征.
主要成果:
- 观察到WSe2中冲击电离的临界电场创纪录的低,特别是洞启动的近电荷中性.
- 在优化条件下,在WSe2中显示出很大的乘法因子.
- 发现载体密度的增加减少了冲击电离,这是由于费米能和选的增加.
结论:
- WSe2显示了高性能,低功耗电子设备利用冲击电离化的巨大潜力.
- 控制载体密度和选效应对于优化WSe2.2中的冲击电离是至关重要的.
- 这些发现可以通过调整外部参数来提高晶体管和APD的性能.
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