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基于对齐碳纳米管阵列的N型场效应晶体管的缩放

Chenchen Liu¹, Yu Cao¹, Haozhe Lu²

¹Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces

|October 2, 2024

概括

对齐的碳纳米管n型场效应晶体管 (N-FET) 显示了创纪录的性能,但由于接触氧化而面临扩展挑战. 这项研究推进了碳纳米管互补金属氧化物半导体技术.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电气工程电气工程

背景情况:

晶圆尺度对齐的碳纳米管 (A-CNT) 是先进的集成电路 (IC) 的关键.
虽然A-CNT p型FETs (P-FETs) 显示出卓越的性能和可扩展性,但A-CNT n型FETs (N-FETs) 显著滞后.
解决N-FET性能和扩展对于未来的CNT CMOS技术至关重要.

研究的目的:

为了制造和表征高性能顶级A-CNT N-FETs.
为了研究这些设备中观察到的异常缩放行为.
为改善 A-CNT N-FET 和 CNT CMOS IC 提供见解.

主要方法:

使用A-CNT与 (Sc) 源/排水接触的顶级N-FET的制造.
电气特征测量现状电流 (离子) 和透导 (gm).
分析设备缩放行为和接触氧化效应.

主要成果:

经过证明的高性能A-CNT N-FET,其记录离子> 1 mA/μm,gm = 0.4 mS/μm.
观察到异常的缩放行为归因于Sc接触者的侧面氧化.
在同时缩放门长度 (Lg) 和接触长度 (Lc) 中发现了挑战.

结论:

与接触的A-CNT N-FET实现了创纪录的性能.
侧接触氧化对设备缩放具有重大障碍.
了解这种行为对于推进基于CNT的数字IC至关重要.

关键词:

这是一个CMOS系统.不正常的缩放尺寸是异常的.碳纳米管是如何使用的场效应晶体管的领域效应晶体管.侧面氧化的一种.

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