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对多层MoS₂Schottky屏障场效应晶体管的设备模拟研究

Zhuoyang He¹, HeeBong Yang¹, Na Young Kim¹

¹Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, Institute for Quantum Computing, University of Waterloo, 200 University Ave. West, Waterloo, ON N2L 3G1, Canada.

|October 2, 2024

概括

这项研究探讨了多层二硫化物 (MoS) 斯科特基屏障场效应晶体管 (SBFETs). 研究人员优化了金属接触器,以实现可调节的设备行为和纳米电子的高性能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二硫化物 (MoS) 是一种2D半导体,根据层数可调节电子特性.
磁场效应晶体管 (FET) 是由于原子厚度和高电特性,对纳米电子有希望.
在金属接触处的费米级固定显著影响MoS₂ FET特性.

研究的目的:

研究金属接触对多层MoS₂Schottky屏障FET (SBFET) 性能的影响.
探索在MoS₂ SBFET中实现p型和双极运输的方法.
为增强的电气和光子应用提出设备配置.

主要方法:

多层MoS₂SBFET的计算设备建模.
对金属接触对设备特性影响的分析.
用不对称的金属电极和双分割门几何学模拟设备操作.

主要成果:

证明了p型MoS₂ SBFETs的可行性,具有特定的金属选择和门控制.
拟议的双极多层MoS₂SBFETs表现出门电压依赖的传输.
实现了四种不同的操作配置 (p-p,n-n,p-n,n-p) 与双分割门.
计算的电气特性显示了高整正比率的潜力.

结论:

优化金属接触对于控制MoS₂SBFET性能至关重要.
可调节的p型和双极运输可以在多层MoS₂SBFET中实现.
先进的设备几何结构使高效的电子和光子设备的多功能操作成为可能.

关键词:

斯科特基屏障是一个障碍.二硫化物是一种二硫化物.纳米电子学纳米电子学晶体管是一种晶体管.两个维的材料是二维材料.

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