使用C4H2F6基气的无面膜氧化物/化物/氧化物/化物 (ONON) 堆叠结构的蚀刻特性
Nam Il Cho1, Jong Woo Hong2, Hee Jin Yoo3
1Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do, 16419, Republic of Korea.
Scientific reports
|October 2, 2024
概括
本研究介绍了基于C4H2F6的气体用于蚀刻氧化物/化物/氧化物/化物 (ONON) 堆,与传统方法相比,它提供了更好的蚀刻配置文件和更低的环境影响. 这种新型气体提高了3D垂直结构的半导体制造效率.
科学领域:
- 材料科学 材料科学 材料科学
- 化学工程是化学工程的重要组成部分.
- 半导体制造业 半导体制造业
背景情况:
- 氧化物/化物/氧化物/化物 (ONON) 堆对于3D半导体电池至关重要.
- 使用光电阻的传统层次蚀刻耗时且效率低下.
- 现有的使用C4F8或C4F6气体的两步蚀刻方法具有环境缺点,并产生不良的蚀刻形状.
研究的目的:
- 为了研究使用C4H2F6基气的无面膜ONON堆特征的蚀刻特性.
- 为了评估C4H2F6由于其低的全球变暖潜力而带来的环境益处.
- 为了比较C4H2F6与C4F6和C4F8气体的蚀刻性能.
主要方法:
- 在ONON堆特征上使用基于C4H2F6的气体进行了蚀刻实验.
- 分析了包括蚀刻速率,形状,关键维度 (CD) 变化和SiO2和SiNx之间的选择性在内的关键蚀刻特征.
- 与使用C4F6和C4F8气体获得的结果进行了比较.
主要成果:
- 基于C4H2F6的气体表现出比C4F6和C4F8气体更高的蚀刻率.
- 由于C4H2F6中的含量,在SiO2和SiNx之间实现了大约1:1的蚀刻选择性.
- 与C4F6和C4F8相比,C4H2F6观察到下方水平CD变化,这表明有效的侧墙被动化.
结论:
- 基于C4H2F6的气体为半导体制造中的无面膜ONON堆蚀刻提供了一个有前途的替代方案.
- 使用C4H2F6可以改善蚀刻形状,更好地控制尺寸,并减少对环境的影响.
- 进一步研究利用C4H2F6优化侧墙被动化,可以提高其在先进半导体制造中的应用.
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