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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: Jun 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

一个选择器-一个电阻器集成的基于二维异构连接的内存选择器的内存单元.

Minliang Shen¹, Sheng Shen¹, Yueyang Jia¹

¹University of Michigan─Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.

|October 4, 2024

概括

二维材料异构结构在电阻随机存储器 (RRAM) 细胞中充当选择器,显著减少潜入路径电流. 这一创新提高了RRAM性能,并使3D内存阵列更有效率.

关键词:

1S1R 1S1R 是一个 2D异质连接 2D异质连接这是RRAM,RRAM.斯科特基屏障是一个障碍.存储器选择器是一个选择器.

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Last Updated: Jun 11, 2025

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科学领域:

材料科学材料科学材料科学
固态物理固态物理
电气工程电气工程

背景情况:

电阻随机存储器 (RRAM) 阵列遭受潜入路径泄漏电流,阻碍了可扩展性.
二维 (2D) 材料为制造先进电子元件提供可调节的特性.
范德瓦尔斯的异构结构为设计新型设备功能提供了一个多功能平台.

研究的目的:

为RRAM应用展示基于二维材料的异构结构选择器.
将这些选择器集成到一个选择器-一个电阻 (1S1R) RRAM单元中.
评估性能提升和3D内存集成的潜力.

主要方法:

制造多层石墨烯 (MG) /二硫化物 (WS2) / (Pt) 异构选择器.
电流-电压 (I-V) 关系和肖特基屏障属性的实验性表征.
整合2D选择器与基于氧化 (HfOx) 的RRAM,形成1S1R细胞.
在平面和3D内存阵列中的1S1R单元的电路级模拟.

主要成果:

MG/WS2/Pt选择器表现出高度非线性和不对称的I-V特征,这是由于明显的肖特基障碍.
集成的1S1R细胞显示,隐形通路泄漏电流的减少超过100倍.
在大型3D阵列中,模拟显示了显著的功耗降低 (高达86%) 和改进的读写边际 (高达31%).
选择器成功为RRAM操作提供了设置合规电流.

结论:

二维材料异构结构是有效的选择器,可以抑制RRAM中的潜入路径电流.
展示的1S1R细胞为高密度3DRRAM提供了一个有希望的途径.
这个平台有潜力用于高级应用程序,如内存计算.