在二维锡硫化物中氧化诱导的分级带隙缩小,用于高灵敏度宽带光检测
Yue Yu1, Dan Cao1, Lingang Yang1
1College of Science, China Jiliang University, 310018 Hangzhou, China.
Journal of colloid and interface science
|October 5, 2024
概括
在二维硫化 (SnS) 纳米板中氧化诱导的注会产生渐变带隙,显著提高光检测器的性能. 这种方法提高了高性能宽带光检测器的光学吸收和光电流.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 光电学是指光电子产品.
背景情况:
- 二维 (2D) 层次的IV组单基化物表现出对空气氧化敏感的特性,因为它们的表面与体积的比率很高.
- 控制氧化对于调整这些材料的光电子特性至关重要.
研究的目的:
- 调查氧化诱导的梯度兴奋剂的使用,以调节2D组-IV单基因的电子和光电子特性.
- 使用这种兴奋剂策略开发高性能宽带光检测器.
主要方法:
- 物理蒸汽沉积被用于生长硫化 (SnS) 纳米板.
- 对氧化时间和温度的精确控制诱导了层层的氧化兴奋剂和间隙,将SnS转换为SnSOx.
- 制造SnSOx光探测器以评估其性能.
主要成果:
- 从SnS到SnSOx的结构过渡导致了逐渐缩小的带隙.
- SnSOx表现出增强的光学吸收和光电流.
- 制造的SnSOx光探测器在宽带频谱 (520-1550 nm) 中表现出了显著的光响应 (7294 A/W) 和快速响应速度 (<64 μs).
- 性能指标,包括响应能力和检测能力 (9.54 × 10^9 Jones),明显优于SnS设备,并与最先进的二维材料光探测器相竞争.
结论:
- 空气氧化是一种有效的策略,用于设计SnS和其他2D组-IV单基因的电子和光学特性.
- 这种方法使得高性能宽带光电探测器的开发成为可能,其灵敏度和速度都得到了提高.
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