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对Si/SiO₂进行大面积MoS₂的直接液体注入脉冲压MOCVD

Vincent Astié¹, Felipe Wasem Klein², Houssin Makhlouf²

¹Annealsys, 139 Rue des Walkyries, 34000 Montpellier, France. vastie@annealsys.com.

Physical chemistry chemical physics : PCCP

|October 7, 2024

概括

研究人员开发了一种新方法,用于在基板上种植大面积二硫化物 (MoS2) 层,控制厚度. 这一进步对于光电子和微电子应用至关重要.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

过渡金属二化物 (TMD) 对于先进的电子和光电子设备至关重要.
实现大规模,高质量的TMDs与控制厚度的增长仍然是一个重大挑战.
二硫化物 (MoS2) 是一个突出的TMD材料,具有有前途的半导体特性.

研究的目的:

开发一种方法,在Si/SiO2基板上直接,大面积增长二硫化物 (MoS2).
为了证明对生长的MoS2层厚度的控制.
评估合成的MoS2.2的质量,同质性和可重复性.

主要方法:

直接注入液体的脉冲压金属有机化学蒸汽沉积 (DLI-PP-MOCVD) 被使用.
低毒性的前体被用于合成.
通过精确调整前体蒸发速度来实现厚度控制.

主要成果:

连续,大面积的MoS2层在Si/SiO2基板上成功生长.
可以可靠地控制MoS2膜的厚度.
单层MoS2表现出近立体构成 (S/Mo比为1.93-1.95),表面粗度低,以及高光发光量子产量.
材料质量与去皮MoS2和其他CVD培养的MoS2相比.

结论:

DLI-PP-MOCVD为可扩展,高质量的MoS2合成提供了一个可行的途径.
开发的方法允许精确的厚度控制,这对于设备制造至关重要.
合成的MoS2的高质量,特别是单层,使其适用于光电子和微电子应用.

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