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Updated: Jun 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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通过使用二维半金属Cr2Se3设计高性能纳米级Spin-MOSFET设备

Shao-Xian Wang1, Ya-Qi Kong1, Sheng-Yi Zhang1

  • 1Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.

ACS applied materials & interfaces
|October 7, 2024
PubMed
概括

这项研究设计了使用半金属2D Cr2Se3电极和各种2D半导体的高性能纳米级自旋MOSFET设备. 这些设备几乎具有100%的自旋偏振和巨大的磁阻,为先进的自旋电子学铺平了道路.

关键词:
Cr2Se3Se3是什么意思第一个原则是计算.这是半金属半金属.接口 接口 接口 接口 接口纳米级旋转MOSFET的使用方法旋转运输 旋转运输 旋转运输两个维的材料是二维材料.

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