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Updated: Jun 11, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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在单层MoS2中,氧化诱导的光响应度调节,含有硫空位

Irfan H Abidi1, Ankit Bhoriya1,2,3, Pargam Vashishtha1,2,3

  • 1School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria 3001, Australia. Irfan.haider.abidi@rmit.edu.au.

Nanoscale
|October 7, 2024
PubMed
概括

在二硫化 (MoS2) 中的硫空缺会影响在氧化条件下设备的性能. 氧气暴露会动态地改变这些缺陷,影响光电流和高温设备的稳定性.

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