在带有双门MOSFET的完全耗尽的CCD中,以增强的速度实现单电子灵敏度
Miguel Sofo-Haro1, Kevan Donlon2, Juan Estrada3
1<a href="https://ror.org/056tb7j80">Universidad Nacional de Córdoba</a> (CNEA and CONICET), Córdoba, Argentina.
Physical review letters
|October 7, 2024
概括
我们开发了一种全新的双门MOSFET放大器,用于完全耗尽的电荷合器件 (CCD),实现高灵敏度并实现单电子/光子计数. 与现有技术相比,这种新的放大器提供了明显更快的读出速度.
科学领域:
- 固态物理 固态物理
- 半导体设备工程 半导体设备工程
- 图像传感器技术 图像传感器技术
背景情况:
- 完全耗尽的电荷合器件 (CCD) 需要高效的输出放大器来实现高性能成像.
- 现有的放大器,如浮式扩散和浮式门,在速度和灵敏度上有局限性.
- 新型放大器设计对于推进CCD读出能力至关重要.
研究的目的:
- 为完全耗尽的厚型p频道CCD引入新的输出放大器.
- 为了证明拟议放大器的高灵敏度和非破坏性读取能力.
- 将新放大器的性能与现有技术进行比较.
主要方法:
- 作为充电放大器的双门MOSFET的设计和实现.
- 使用CCD和MOSFET通道之间的接口合.
- 在单采样和多采样制度下,读出噪声和读出速度的表征.
主要成果:
- 在单像素充电测量中达到0.74 e−rms/pix的读取噪声.
- 证明了非破坏性的读取能力.
- 达到0.15e−rms/pix,十个样本的平均值在2.74ms的读取时间,使单个电子/光子计数.
- 显示的速度至少是浮式门放大器的6倍.
结论:
- 新型双门MOSFET放大器为完全耗尽的CCD提供了卓越的性能.
- 放大器可以实现高灵敏度,快速和非破坏性读取.
- 这项技术推进了CCD成像,特别是在需要单电子或单光子检测的应用中.
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