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Updated: May 2, 2026

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极端紫外线辐射脉冲原子探头对III-化物半导体材料的断层扫描

Luis Miaja-Avila1, Benjamin W Caplins1, Ann N Chiaramonti1

  • 1National Institute of Standards and Technology, Boulder, Colorado 80305, United States.

The journal of physical chemistry. C, Nanomaterials and interfaces
|October 9, 2024
PubMed
概括

极端紫外线 (EUV) 辐射可靠地触发III-化物半导体中的场离子蒸发,使用原子探头断层扫描. 这种新的EUV APT方法为GaN和AlGaN等材料提供了稳定的组成测量.

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