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Updated: Jun 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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极性依赖VTH转移的微观起源在3D自选记忆的无形素化物中

Ha-Jun Sung1, Minwoo Choi1, Zhe Wu2

  • 1Thin Film Technical Unit, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, 16677, South Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|October 9, 2024
PubMed
概括

欧维尼克值切换选择器使革命性的3D内存成为可能. 这项研究揭示了极性依赖的门电压转移是由充电缺陷动态驱动的,这对于优化仅选择器内存至关重要.

关键词:
无形的石灰化物.转换 Ovonic 的值值.自行选择的内存.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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