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具有高电阻的多态铁电二极管基于范德瓦尔斯的异构结构

Soumya Sarkar¹, Zirun Han², Maheera Abdul Ghani¹

¹Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.

|October 9, 2024

概括

使用范德瓦尔斯 (vdW) CuInP2S6 和石墨烯的新型铁电二极管 (FeD) 为非挥发性记忆 (NVM) 提供了高性能. 这些设备显示了多位数据保留和高级计算应用的潜力.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

具有铁电性的范德瓦尔斯 (vdW) 材料对新型非易失性记忆 (NVM) 是有前途的.
铁电二极管 (FeD) 利用铁电特性用于内存应用.
CuInP2S6 (CIPS) 是一种已知的VDW铁电材料,用于设备集成.

研究的目的:

为了展示使用CuInP2S6 (CIPS) 和石墨烯的垂直异构结构的铁电二极管 (FeD).
描述这些VDW FeDs的电气性能和内存性能.
探索基于CIPS的FeDs在先进计算范式中的潜力.

主要方法:

垂直异构结构的制造包括10纳米厚的CIPS和石墨烯.
与VDW-顶部电极和石墨烯底部电极的集成.
使用电流-电压 (I-V) 测量和压响应力显微镜 (PFM) 进行表征.

主要成果:

在CIPS/石墨烯FeD中证明了自我纠正,歇斯底里电流电压特性.
实现了高电阻 (~10^6),状态整正比 (2500),以及高输出电流密度 (100 A/cm^2).
PFM证实了中间极化状态的稳定,使在室温下稳定的多位数据保留成为可能.

结论:

CIPS/石墨烯vdW异构结构形成适合NVM的高性能FeD.
这些设备显示出出色的电力指标和多位内存能力.
展示的FeD对低功耗内存计算和神经形态计算应用具有前景.

关键词:

在CuInP2S6S6中使用.电阻对电阻的电阻进行了反射.铁电二极管是铁电二极管.多位存储多位存储.不易挥发的记忆无易挥发的记忆范德瓦尔斯异构结构的异构结构

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