通过全Si等离子体热电子探测器进行近红外偏振敏感检测
Shuoqiu Tian1,2, Wentao Yuan1,2, Yu Yu3
1Nanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
Nano letters
|October 9, 2024
概括
本研究介绍了一种全近红外探测器,用于极化敏感的光电子检测. 它利用等离子热电子生成和优化的异性离子变极表面来实现高性能.
科学领域:
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
- 塑制剂是一种塑制剂.
背景情况:
- 对极化敏感的检测对于各种光学应用至关重要.
- 现有的探测器通常面临着灵敏度和光谱范围的限制.
- 基于的设备提供了具有成本效益和综合解决方案的潜力.
研究的目的:
- 开发一个极化敏感的光电子探测器,使用近红外 (NIR) 范围内的.
- 通过先进的设备架构和超表面设计来提高内部量子效率 (IQE).
- 通过外部偏差来研究光电子响应的可调性.
主要方法:
- 使用的等离子热电子生成和内部光辐射效应.
- 设计和结构优化了一个异性质的超表面.
- 使用有限差异时间域 (FDTD) 模拟来优化设备.
- 进行光电子测量以描述设备性能.
- 开发了一个IQE估计的理论模型.
主要成果:
- 在1.45μm时达到80%的最大光学吸收率,光学分辨率为120.
- 已证明的峰值响应率为51.2 mA/W,探测能力为8.05 × 10^10 cm Hz^1/2/W,在1.45 μm.
- 获得了35nm的高极化光电流比在1.55μm时.
- 展示了可调节的光电子响应与后门偏差.
结论:
- 在NIR范围内成功展示了一个极化敏感的全Si探测器.
- 经过优化的异性质超表面显著提高了IQE和设备性能.
- 开发的理论模型为未来热电子探测器技术的改进提供了途径.
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