超高PDCR) 的真空紫外线光探测器,基于Al-合的Ga2O3微带
Zhi-Pin Hu1, Hai-Feng Chen1, Zi-Jie Ding1
1Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, People's Republic of China.
Nanotechnology
|October 9, 2024
概括
氧化物 (Ga2O3) 微带被用于制造高度敏感的紫外线 (UV) 探测器. 这些探测器在真空-紫外线 (VUV) 检测方面表现出色,具有创纪录的高光暗电流比.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 光电学是指光电子产品.
背景情况:
- 氧化 (Ga2O3) 是光电子应用的一个有前途的半导体.
- 开发高效的紫外线 (UV) 探测器,特别是真空-UV (VUV) 探测器,仍然是一个挑战.
研究的目的:
- 制造和表征合Al的Ga2O3微带式金属半导体金属光导探测器.
- 为了研究它们的光电子性能,用于VUV检测.
主要方法:
- 使用碳热还原方法培养了化Ga2O3微带.
- 制造了单个和双个微带光导探测器.
- 在185nm的VUV照射下评估了光电子性能.
主要成果:
- 用Al合的Ga2O3探测器在10V时显示出192.07μA的光电流和156 fA的暗电流.
- 实现了1.23 × 10^9的超高的明暗电流比.
- 双微带装置的高响应率 (1920 A/W),EQE (9.36 × 10^5%) 和检测能力 (8.6 × 10^16 斯) 被记录下来.
结论:
- 化Ga2O3微带适用于制造高性能VUV光探测器.
- 化Ga2O3的更宽的带隙增强了对更长的紫外线波长的选择性.
- 这项工作提供了对基于Ga2O3的VUV光探测器开发的见解.
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