超高PDCR) 的真空紫外线光探测器,基于Al-合的Ga2O3微带

Zhi-Pin Hu1, Hai-Feng Chen1, Zi-Jie Ding1

  • 1Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, People's Republic of China.

Nanotechnology
|October 9, 2024
PubMed
概括

氧化物 (Ga2O3) 微带被用于制造高度敏感的紫外线 (UV) 探测器. 这些探测器在真空-紫外线 (VUV) 检测方面表现出色,具有创纪录的高光暗电流比.

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