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一个两步干蚀刻模型用于非统一的蚀刻配置在门全方位场效应晶体管制造

Ziyi Hu^1,2, Junjie Li¹, Rui Chen¹

¹Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.

Small (Weinheim an der Bergstrasse, Germany)

|October 11, 2024

概括

门周围场效应晶体管 (GAAFET) 制造面临着不均蚀刻的挑战. 这项研究模拟了该过程,以改善GAAFET内部空间形成和设备性能.

科学领域:

半导体设备物理学半导体设备物理
材料科学与工程材料科学与工程
先进的微电子制造工艺的制造.

背景情况:

门全方位场效应晶体管 (GAAFET) 对于下一代高性能电子产品至关重要.
制造GAAFET涉及复杂的多层结构,这给制造业带来了挑战.
对于内部空间形成的SiGe层的选择性横向蚀刻是一个关键和有问题的步骤,通常会导致不均的配置文件.

研究的目的:

研究GAAFET制造中的SiGe层蚀刻过程中不均的蚀刻配置文件的机制.
开发一个预测模型来模拟选择性横向蚀刻过程.
为了优化内部间隔器形成,以提高GAAFET性能.

主要方法:

开发一个连续的两步干蚀刻模型.
整合了异型蚀刻模拟,Ge原子扩散模拟,Si/SiGe蚀刻选择性计算和SiGe选择性蚀刻模拟模块.
使用实验数据对模型进行校准和验证.

主要成果:

拟议的模型成功地模拟了侧墙表面的边缘圆和梯度蚀刻率.
该模型提供了关于室内压力对蚀刻配置文件的影响的见解.
通过降低室内压力进行实验优化,改善了内部空间形状.

结论:

开发的两步干蚀刻模型准确地捕捉了GAAFET制造中的非均蚀刻现象.
降低室内压力是改善内部空间均性的有效策略.
这项研究为优化高级GAAFET制造中的蚀刻工艺配方提供了宝贵的指导.

关键词:

这就是GAAFET的意义.选择性蚀刻 SiGe 的选择性蚀刻内部空间器的内部空间器.不统一的蚀刻形状是不统一的过程 TCAD 模拟过程

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