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在1T-CrTe₂中通过In₂Se₃基板对二维铁磁的磁电调

Lijing Luo¹, Qilong Sun¹, Meng Guo²

¹School of Science, Shandong Jianzhu University, Jinan 250101, China.

Langmuir : the ACS journal of surfaces and colloids

|October 11, 2024

概括

我们用铁电In2Se3层在1T-CrTe2中演示了对2D铁磁的电场控制. 这种多铁体异构结构允许用于自旋电子设备的可调节磁性属性.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

二维 (2D) 材料具有独特的电子和磁性特性.
通过电场控制二维材料中的磁性对于纳米级设备至关重要.
多铁材料结合了多个铁序列,使新的功能成为可能.

研究的目的:

通过使用铁电In2Se3亚层,研究1T-CrTe2单层中2D铁磁的多铁控制.
探索极化切换对1T-CrTe2/In2Se3异构的电子和磁性特性的影响.
检查外部应变和表面化对磁性异性质能量 (MAE) 和切换行为的影响.

主要方法:

1T-CrTe2/In2Se3异构结构的制造.1T-CrTe2/In2Se3异构结构的制造.
第一原则计算用于研究电子结构和磁性.
对磁电合效应的分析.
对MAE的应变和化效应的研究.

主要成果:

通过In2Se3偏振开关在1T-CrTe2中证明了对2D铁磁的电场控制.
观察到MAE和磁化方向的显著操纵.
揭示了对MAE的强烈依赖,并开启了外部应变和表面化.
在化多铁结构中注意到极化切换的反向修改.
由于磁电合,Te接口上的改变的p轨道归因于可调节的行为.

结论:

1T-CrTe2/In2Se3异构连接表现出可调节的多铁性质.
磁电合有效地控制磁性异构和方向.
外部应变和化为磁性行为提供了进一步的调节.
这些发现突显了二维多铁子旋转子设备的潜力.

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