定制PBE交换相关函数:在各种半导体中用于频段间隙预测的综合方法
Satadeep Bhattacharjee1, Namitha Anna Koshi1, Seung-Cheol Lee2
1Indo-Korea Science and Technology Center (IKST), Bengaluru 560064, India. s.bhattacharjee@ikst.res.in.
Physical chemistry chemical physics : PCCP
|October 11, 2024
概括
这项研究引入了定制的Perdew-Burke-Ernzerhof (PBE) 函数,用于准确的半导体带间隙预测. 这些具有成本效益的方法为复杂的DFT+U,GW和HSE方法提供了现实的替代方案.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学计算化学
背景情况:
- 准确的带隙预测对于半导体开发至关重要.
- 像DFT+U,GW和HSE这样的传统方法在准确性,成本或适用性方面都有局限性.
研究的目的:
- 开发和验证定制的Perdew-Burke-Ernzerhof (PBE) 函数,用于预测半导体带间隙.
- 为现有计算方法提供成本效益高且准确的替代方案.
主要方法:
- 扩展PBE功能,以解决半导体中的交换相关复杂性.
- 与 DFT+U,GW,HSE 和 SCAN 方法进行定制函数的比较.
主要成果:
- 定制的PBE功能提供了一种现实的和具有成本效益的方法来预测带隙.
- 定制函数的性能与强制约束和适当规范的 (SCAN) 函数对带间隙的性能相当.
- 开发的功能方便了电子结构和材料属性的统一工作流.
结论:
- 定制的PBE函数为准确和高效的半导体性能预测提供了一个有希望的途径.
- 这项工作可以在没有高昂的计算成本的情况下创建全面的物质财产数据库.
更多相关视频
08:04Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
Published on: May 27, 2020
8.4K
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
13.8K
相关概念视频
Band Theory
15.0K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
15.0K
Semiconductors
652
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
652
Energy Bands in Solids
749
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
749
Fermi Level Dynamics
226
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
226
Types of Semiconductors
540
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
540
Fermi Level
522
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
522
