光诱导的铁电极化在滑动铁电中完全逆转
Qing Yang1,2, Sheng Meng1,3,4
1Beijing National Laboratory for Condensed Matter Physics and <a href="https://ror.org/05cvf7v30">Institute of Physics, Chinese Academy of Sciences</a>, Beijing 100190, China.
Physical review letters
|October 11, 2024
概括
在六角化 (h-BN) 双层中,超快铁电极化逆转在0.5皮秒内发生. 激光诱导的层间滑动,由声子激发驱动,使得这种快速切换在2D材料.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 之前的研究表明,在2D材料中,滑动铁电和光激发的层间剪切位移.
- 铁电极化开关对于先进的电子设备至关重要.
研究的目的:
- 为了研究六角化 (h-BN) 双层中的超快铁电极化反转.
- 阐明激光诱导极化切换背后的微观机制.
主要方法:
- 使用激光照明触发极化逆转.
- 分析多个声子模式 (TO-1和LO-1) 的选择性激发.
- 研究N和B原子的pz轨道之间的层间电子激发.
主要成果:
- 在0.5皮秒内实现了h-BN双层垂直铁电极化完全逆转.
- 识别了激光诱导的层间滑动作为极化切换的起源.
- 证明了特定的声子模式激活 (TO-1和LO-1) 和电子激发驱动了反转.
结论:
- 激光照明可以通过声子介导的层间滑动在h-BN双层中诱导超快的铁电极化逆转.
- 这为控制二维铁电的偏振动力学提供了一个新的机制.
- 提供了关于设计下一代超高速电子设备的见解.
更多相关视频
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
8.2K
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
8.1K
相关概念视频
Ferromagnetism
2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Biasing of Metal-Semiconductor Junctions
216
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
216
The Hall Effect
2.3K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.3K
