AlNGaN

Kamil Czelej1,2, M Rey Lambert3, Mark E Turiansky4

  • 1Faculty of Chemical and Process Engineering, Warsaw University of Technology, Ludwika Warynskiego 1, Warsaw 00-645, Poland.

ACS nano
|October 12, 2024
PubMed
概括

在AlN和GaN中和的缺陷被确定为量子信息处理的有希望的偏磁自旋缺陷. 这些缺陷表现出狭窄的量子发射,使它们适合光学操纵和自旋量子比特应用.