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Updated: Jun 10, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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理论研究金属互连中对金属传输特性点缺陷的理论研究

Shumin Yan1, Ruiling Gao1, Shunbo Hu1,2

  • 1Physics Department, International Center of Quantum and Molecular Structures, Institute for the Conservation of Cultural Heritage, Materials Genome Institute, Shanghai University, 200444 Shanghai, People's Republic of China.

Journal of physics. Condensed matter : an Institute of Physics journal
|October 14, 2024
PubMed
概括

像空位和碳化等点缺陷会降低金属互连电导率. 碳兴奋剂严重影响Al,Cu和Ag,而空缺更严重影响Ir,Rh和Ru,Rh表现出优越的导电性.

关键词:
第一个原则计算计算.金属互连连接的金属互连连接缺点点是指缺点点的缺陷点,是指缺点点的缺陷点.转移属性 转移属性

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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