激发光热半导体在激光脉冲下进行热扩散,并通过声压加热升温
Hashim M Alshehri1, Khaled Lotfy2,3
1Mathematics Department, Faculty of Science, King Abdulaziz University, Jeddah, 21521, Saudi Arabia.
Heliyon
|October 14, 2024
概括
这项研究模拟了光激发半导体中的声热机械波传播. 它揭示了放松时间和激光脉冲效应如何影响这些材料中的波浪行为.
科学领域:
- 半导体物理 半导体物理
- 数学建模的数学建模
- 波浪的传播方式
背景情况:
- 半导体材料对光刺激表现出复杂的反应.
- 了解声热机械波传播对于光电子应用至关重要.
- 非高斯激光脉冲引入了独特的激发动态.
研究的目的:
- 开发一种新的数学模型,用于光激发半导体介质中的波传播.
- 分析声压和电荷载体重组的影响.
- 调查放松时间和激光脉冲特征的作用.
主要方法:
- 使用拉普拉斯变换在一个一维的 (1D) 框架.
- 应用了具有特定初始和边界条件的逆拉普拉斯变换.
- 开发了物理量如位移,应力,载体密度,温度和声压等数值建模.
主要成果:
- 为波传播现象生成精确的解决方案.
- 提供物理量图形表示.
- 分析了热量上升时间,放松时间和激光脉冲对波浪行为的影响.
结论:
- 开发的模型准确地描述了声学-热力-机械扩散波的传播.
- 放松时间和激光脉冲参数显著影响波动力学.
- 这些发现提供了关于光激发下的半导体光电子特性的见解.
相关概念视频
01:22Carrier Generation and Recombination
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...