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Capacitor With A Dielectric01:18

Capacitor With A Dielectric

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Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
3.9K
Metallic Solids02:37

Metallic Solids

18.3K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
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Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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价格实惠的二维分层Cd(II) 协调聚合物:高性能伪电容电极行为

Samika Anand1, Sunaja Devi Kalathiparambil Rajendra Pai1, Abhishek Kumar2,3

  • 1Department of Chemistry, Christ University, Bangalore 560029, Karnataka, India.

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一种基于的新型协调聚合物Cd (DAB) 为超级电容器提供了出色的性能. 这种具有成本效益的材料表现出高特异电容和长周期寿命,为先进的储能解决方案铺平了道路.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电化学 电化学 电化学
  • 纳米技术纳米技术

背景情况:

  • 伪容量材料对于高能量和高功率密度存储至关重要.
  • 在材料降解,导电性,循环稳定性和成本方面仍然存在挑战.

研究的目的:

  • 为了合成和表征一种基于的新型协调聚合物 (Cd ((DAB)).
  • 为了评估超级电容器应用中Cd (DAB) 的伪电容性行为和电化学性能.

主要方法:

  • 在室温下从3,3'-diaminobenzidine (DAB) 和Cd (II) 离子中轻松合成Cd (DAB) 的单合成.
  • 使用光谱和电子显微镜技术进行结构性表征.
  • 作为超级电容器的电极材料的电化学性能评估.

主要成果:

  • Cd(DAB) 形成一个具有高导电性的二维分层结构.
  • 在20 A g-1.1下达到1341.6 F g-1的特定电容.
  • 经证明的长周期寿命,在10,000个周期内保持81%的电容.
  • 一个不对称的超级电容器装置在1Ag-1.1时显示了428.5Fg-1的特定电容.

结论:

  • Cd(DAB) 是一种具有成本效益和高性能的伪电容材料.
  • 该材料具有出色的能量储存能力和循环稳定性.
  • 对于下一代超级电容器设备来说,Cd(DAB) 是一个有前途的例子.