蚀刻方法对III-V和II-VI材料缺陷水平发生的影响
Kinga Majkowycz1, Krzysztof Murawski1, Małgorzata Kopytko1
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Nanomaterials (Basel, Switzerland)
|October 15, 2024
概括
蚀刻方法影响,,,和 (MCT) 光二极管的缺陷水平,但不影响,,和 (InAs/InAsSb) 类型II超级格子 (T2SLs) 的缺陷水平. 这一发现对于优化光探测器制造至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 光探测器的缺陷水平显著影响性能.
- 了解制造对缺陷的影响是先进红外探测器的关键.
研究的目的:
- 调查不同的蚀刻方法如何影响InAs/InAsSb类型II超级格子 (T2SL) 和基 Telluride (MCT) 光二极管的缺陷水平.
- 为了比较湿化学蚀刻与反应性离子蚀刻 (RIE) 对缺陷形成的影响.
主要方法:
- 采用了两个蚀刻技术:湿化学蚀刻和干蚀刻 (RIE).
- 深层瞬态光谱 (DLTS) 用于描述制造结构中的缺陷水平.
主要成果:
- 反应离子蚀刻 (RIE) 在MCT材料中引入了额外的缺陷水平.
- 在InAs/InAsSb T2SL中,不管采用了哪种蚀刻方法,缺陷水平没有显著变化.
- 在这两种探测器类型中,DLTS成功地确定和量化了缺陷水平.
结论:
- 蚀刻方法的选择对于MCT光二极管制造至关重要,以控制缺陷.
- InAs/InAsSb T2SL提供了对蚀刻引起的缺陷的优越稳定性,使其对苛刻的应用具有前景.
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