基于FeNi的多层磁阻抗元素中磁静态相互作用的影响
Grigory Yu Melnikov1, Sergey V Komogortsev2,3, Andrey V Svalov1
1Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia.
Sensors (Basel, Switzerland)
|October 16, 2024
概括
研究人员开发了具有高灵敏性的多层磁阻抗 (MI) 元素. 优化元素设计和[Cu/FeNi]多层中的磁静态相互作用是敏感磁场检测的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 磁阻抗 (MI) 传感器对于磁场检测至关重要.
- 优化多层结构对于提高MI传感器性能至关重要.
研究的目的:
- 制造和表征具有增强灵敏度的多层磁阻电阻元件.
- 研究多层设计和磁静态相互作用对MI特性的影响.
主要方法:
- 磁力喷射用于多层沉积.
- 用于元素制造的升起式光刻.
- 对磁域结构和铁磁共振的分析.
- 频率依赖调查的动态方法.
主要成果:
- 在低磁场范围 (3-5 Oe) 中达到40%/Oe的最大MI灵敏度.
- 证明了FeNi层之间的磁静态相互作用的关键作用.
- 元素的设计,包括条纹形状和多层堆叠,显著影响磁性.
结论:
- 开发的[Cu/FeNi]多层结构显示出对磁场传感应用有前途的高灵敏度.
- 对磁静态相互作用和元素几何学的仔细控制对于优化MI传感器性能至关重要.
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