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Updated: Jun 10, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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大规模β-Ga2O3系统中的点缺陷的基于辐射分布函数的识别算法.

Mengzhi Yan1, Junlei Zhao2, Jesper Byggmästar3

  • 1State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China.

The journal of physical chemistry letters
|October 16, 2024
PubMed
概括

我们开发了一个精确的算法,使用计算建模来识别β-氧化物 (β-Ga2O3) 的内在缺陷. 这种方法的准确度超过95%,可以在模拟中实时检测缺陷.

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Picometer-Precision Atomic Position Tracking through Electron Microscopy

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相关概念视频

X-ray Diffraction of Biological Samples01:10

X-ray Diffraction of Biological Samples

X-ray diffraction or XRD is an analytical tool that utilizes X-rays to study ordered structures such as crystalline organic and inorganic samples, polycrystalline materials, proteins, carbohydrates, and drugs.
According to Bragg's law, when X-rays strike the sample positioned on a stage, the rays are  scattered by the electron clouds around the sample atoms. The  X-ray diffraction or scattering is caused by constructive interference of the X-ray waves that reflect off the internal...
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