关于基于NiO的反转金属化物矿太阳能电池的VOC损失
Kousumi Mukherjee1, Denise Kreugel1, Nga Phung1
1Department of Applied Physics and Science Education, Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands k.mukherjee@tue.nl.
概括
氧化 (NiO) 作为一个孔输送层 (HTL) 显示出希望,但性能受到NiO/矿接口重组的限制. 通过被动化这种接口,可以显著提高开放电路电压,这表明接口质量是关键,而不是NiO电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 可再生能源可再生能源是可再生能源.
- 半导体设备 半导体设备
背景情况:
- 氧化 (NiO) 作为光伏设备中的孔输送层 (HTL) 被探索.
- 没有有机层 (PTAA, SAMs) 的 NiO 集成通常会导致设备性能不佳.
- 尼奥的关键性质,如电阻和表面能量,对于设备的效率至关重要.
研究的目的:
- 为了研究NiO电阻和表面能量对设备性能的影响.
- 系统地比较基于 NiO 的设备与基于 PTAA 的设备.
- 为了确定基于NiO的孔输送层的性能限制.
主要方法:
- 使用不同的原子层沉积 (ALD) 技术制造和表征NiO薄膜:NiOBu-MeAMD,Al-doped NiOBu-MeAMD,以及NiOMeCp.
- 评估NiO薄膜电阻和表面能量.
- 设备性能测试 (PCE,VOC,FF) 和在不同的光强度下进行分析.
- 模拟SCAPS模拟以模拟界面陷密度效应.
- 使用Me-4PACz.进行接口被动化.
主要成果:
- 与高电阻 NiO 相比,具有较低电阻率 (Al:NiOBu-MeAMD,NiOMeCp) 的 NiO 薄膜仅显示了开通电路电压 (VOC) 的适度增加.
- 性能最好的NiO设备 (14.8%PCE) 落后于PTAA设备 (17.5%PCE),主要是由于VOC损失,归因于NiO/矿接口的陷辅助重组.
- 使用Me-4PACz的接口被动化显著提高了VOC170-200mV,表明接口质量,而不是NiO电阻,对于高VOC至关重要.
结论:
- 基于NiO的设备的性能主要受到NiO/矿接口上的重组而不是NiO电阻的限制.
- 在基于NiO的太阳能电池中,接口被动化对于实现高开通电路电压至关重要.
- 未来的比较应该考虑最先进的HTL来准确评估NiO的潜力.
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