基于GaN的β电压核电池与3D接口的性能研究
1College of Mechanical Engineering, Dalian University of Technology, Dalian, Liaoning, 116023, China.
概括
这项研究使用3D接口模型模拟了基于GaN的β电压核电池. 优化的设计与147Pm源显著提高功率密度相比Ni.63相比.
科学领域:
- 材料科学 材料科学 材料科学
- 核工程 核工程是指核工程.
- 半导体物理 半导体物理
背景情况:
- 贝塔电压核电池提供长期的电力解决方案.
- 化 (GaN) 是这些设备的一个有前途的半导体.
- 优化3D接口结构对于性能至关重要.
研究的目的:
- 设计和模拟基于GaN的β电池的3D接口模型.
- 使用不同的放射性源和结构参数预测电池性能.
- 为了比较实际加工过程对电池产量的影响.
主要方法:
- 利用Geant4计算在63Ni和147Pm辐射下GaN中的电子孔对生成率.
- 雇佣了COMSOL多物理,用于电子孔对运输的有限元分析.
- 模拟了结构参数的影响,如倒置金字塔数量和连接深度.
主要成果:
- 模拟显示了不同放射源的显著性能变化 (Jsc,Voc,Pmax).
- 优化的参数 (源63个,特定的兴奋剂,0.1微米的连接深度,25个倒置的金字塔) 产生了Jsc=0.648μA/cm2,Voc=2.3481V,Pmax=1.2949μW/cm2.
- 切换到147Pm源导致Jsc大幅增加到56.865μA/cm2和Pmax到94.975μW/cm2.
结论:
- 放射性源的选择极大地影响了GaNβ电池的性能.
- 与Ni.63相比,Pm提供了显著更高的输出功率密度.
- 3D接口模拟模型为优化betavoltaic设备设计提供了一个有价值的工具.
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