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化学蒸汽沉积的二硫化物的局部应变依赖蚀刻模式

Birong Luo1, Rongnan Wang1, Tianxiang Zhao2

  • 1College of Physics and Materials Science, Tianjin Normal University, Tianjin, 300387, P. R. China.

Small methods
|October 18, 2024
PubMed
概括

在二维二硫化物 (MoS2) 中的应变工程决定了蚀刻模式. 均的低应变产生三角形坑,而高应变产生六角形通道,使纳米结构材料设计成为可能.

关键词:
2D二硫化物是二维二硫化物.化学蒸气沉积 化学蒸气沉积蚀刻图案 蚀刻图案 蚀刻图案骨折传播的传播是骨折的传播.当地菌株局部菌株

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