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Updated: Jun 10, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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在混合MXene/GaN异构结构中的接口屏障工程,用于Schottky二极管应用

Dominika Majchrzak1, Karol Kulinowski2, Wojciech Olszewski1,3

  • 1Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.

ACS applied materials & interfaces
|October 18, 2024
PubMed
概括

无接触电反射检测显示,MXene涂层在化 (GaN) 上提高了接口屏障. 化MXene/GaN结构增强了这种屏障,证明了设备应用的强大稳定性.

关键词:
在 GaN GaN 中.这就是MXene MXene.斯科特基二极管是如何使用的接口研究 接口研究这是光谱学.

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